Compare nextnano vs Silicon Photonics Group
Customers evaluate the quality of nextnano's products using the following success metrics.
nextnano is based in Germany
Development of software for the simulation of electronic and optoelectronic semiconductor nanodevices and materials (e.g. transistors, resonant tunneling diodes, quantum wells, quantum wires, quantum dots, quantum-cascade lasers). nnDue to the continuing downscaling (Moore's law) of semiconductor electronics, quantum physical effects are gaining importance and confront the industry with fundamental challenges with respect to simulation and design. Existing tools cannot cope with these challenges and alternatives are not in sight. nnThe company's selling proposition is a better physical method for the calculation of the quantum mechanical properties of an arbitrary combination of geometries and materials, i.e. nextnanou00b3 is not limited to certain types of devices and thus perfectly suited for both, currently existing devices and devices, like for instance protein sensors (bio chips). nnnn"Disruptive Technologies"nnnextnanou00b3 acts in new markets: nanowires, bio chips, efficient solar cells, organic semiconductors (OLED, OFET), nanocrystals, spintronics, quantum cryptography, quantum computing. nn
Silicon Photonics Group is based in United States
Silicon Photonics Group is a company that received a STTR Phase I grant for a project entitled: Advanced Si-Ge-Sn-based Photonic Materials and Devices. Their research project aims to demonstrate prototype infrared light detectors and photovoltaic (solar cell) devices based on technology developed at Arizona State University. The new technology to be explored consists in growing optical-quality alloys of tin and germanium (Ge1-ySny) directly on silicon wafers. These alloys act as infrared materials, and they can also be used as templates for the subsequent growth of other semiconductors on silicon. Of particular interest for this project is the ternary alloy Ge1-x-ySixSny, grown for the first time at Arizona State University. Using this technology, it should be possible to build infrared detectors covering a spectral range previously inaccessible to silicon-based detectors, and to build multijunction photovoltaic devices for a more efficient capture of solar photons. The fabrication of semiconductor devices on cheap silicon wafers is of great significance because of the potentially enormous cost reductions and the possibility of integrating optoelectronic and microelectronic functions, which further reduces costs and contributes to system miniaturization. The infrared detectors proposed here cover the so-called telecom C-,L-, and U-bands within the wavelength window around 1500 nm, a region of great interest to the telecommunications industry. In the photovoltaics arena, the proposed devices have the potential to offer increased efficiencies to make crystalline silicon-based devices competitive with amorphous silicon solutions.
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