AOS Solar was started in 2005 to combine the material cost and manufacturing process economics of thin film solar PV with the efficiency and reliability of crystalline silicon solar PV. The company have an initial prototype solar coupon built and tested using technology. nnThe company's key enablers to achieve market traction are the cost and reliability of the company's product. The silicon on glass (SOG) technology the company are developing will enable solar panels costing around $1/watt to manufacture on the company's pilot line, with lower costs as the company ramp up production due to manufacturing efficiencies and learning curve. Solar silicon is an established technology with proven 20+ year life (versus newer thin film technologies). nnToday the company have working coupons at 7.5% efficiency and the company are working to scale up to larger cells with target 9% efficiency in Q-1, 2008. The company's form factor and efficiency limits are based on first generation technology. By scaling the company's manufacturing and improving the company's technology the company expect to achieve 16 - 18% efficiency in a single junction and 22 - 24% efficiency in a double junction module. nnThe company's A round funding will be used to continue development of the company's equipment / process technology in order to manufacture on larger substrates (2.5' x 4' glass) and to design a scaled up manufacturing line (30+MW annual capacity) based on this development.

Solarno is a company that received a STTR Phase I grant for a project entitled: Synthesis of multifunctional nanofibrous polyaniline/carbon composites. Their their award is funded under the American Recovery and Reinvestment Act of 2009 and their project will develop novel multifunctional materials based on polyaniline (PAni) nanofibers (PANFs) and carbon nanofibers(CNFs) for energy storage. Although PAni composites have been reported for a wide range of applications, including sensors, biosensors, photoelectrochromic cells, etc., due to their excellent electrical, thermal and mechanical properties, none capitalize on the enhanced properties expected from the combination of PANF with CNF. PANFs have greater electronic conductivity than PAni nanospheres and nanorods and can be synthesized on a variety of substrates. Solarno will use a proprietary process for synthesizing composites of PANFs on CNFs. In Phase I Solarno will use these composites as electrode materials for asymmetric supercapacitors, an enabling technology that provides both high energy and power, with the specific technical objectives of: synthesizing and characterizing PANFs on CNF substrates, and achieving supercapacitor performance of 15 Wh/kg, 10 kW/kg and >10 cycles, thus far exceeding current lead acid batteries in terms of power and cycle life. In Phase II we will improve the energy density of these devices to enable potential replacement of such batteries, and explore other functions for the composites, such as sensors and electro-chemical devices. The PANF/CNF composites developed by Solarno will be introduced to the supercapacitor market via materials sales, and partnering/licensing arrangements, and later to related electrochemical functions/applications. Solarno is targeting requirements of the Hybrid Electric Vehicle (HEV) market for its initial supercapacitor designs, and as such, the ultimate customers will be major automobile manufacturers. The market requires that capacitors provide higher energy density, reduced size, higher reliability, and lower cost. Commercially available EDLCs commonly provide energy densities around 4 Wh/kg, and power densities between 15-21 kW/kg. The supercapacitor developed here can excel in this market by providing energy density > 25 Wh/kg and better reliability (>2.0 x 104 cycles); the Phase I work will optimize the properties of our PANF/CNF composite to meet this goal. The supercapacitors will also be well-suited for load-leveling for renewable energy sources; direct societal benefits will come from improving the viability of HEVs and renewable sources, tied to reductions in fossil fuel consumption, providing bridge power for wind and solar power farms, and partially replacing lead acid storage batteries. The results of this work in optimizing PAni composites for supercapacitors will translate well into improved functionality for other applications.

Ambp Technology Corporation is a company that received a SBIR Phase I grant for a project entitled: Photovoltaic Laser Annealing System. Their project proposes to achieve recently reported gains in CIGS solar cell efficiency from in-situ laser deposition, by using an ex-situ laser annealing approach that is compatible with an existing pilot manufacturing system. The proposed ex-situ approach will not need to heat the substrate above the 425C value used to manufacture CIGS solar cells on flexible polyimide substrates. Solar cell technology is an energy alternative that can reduce America's dependence on fossil-fuel-generated electric power. A truly cost effective technology is to build cells using methods whose thermal budgets are low enough to enable the use of inexpensive polymer substrates, which enables large-area roll-to-roll processing and automated cell-to-cell connection techniques. AMBP Tech Corporation will develop and demonstrate a tool to improve solar cell performance that is immediately applicable in the solar-cell manufacturing marketplace.

Gratings Incorporated is a company that received a STTR Phase I grant for a project entitled: High Efficiency Thin-film Photovoltaics on Low-cost Substrates by Layer Transfer. Their their award is funded under the American Recovery and Reinvestment Act of 2009 and their project will apply high aspect ratio, nm-scale, columnar, and crystalline Si structures as templates for high-quality growth of thin-film GaAs solar cells on low-cost flexible substrates. Sub-10-nm Si seed layers are expected to facilitate growth of low-defect density GaAs films. The aspect ratio of nm-scale structures also serve as sacrificial layers for removal of completed GaAs solar cell. Epitaxial growth and characterization of GaAs films on nm-scale Si structures will be carried out at the Center for High Technology at the University of New Mexico. Successful phase I STTR research will lead to commercialization of high (~ 20 %) efficient, flexible solar cells for applications in a wide range of terrestrial and space environments. Multiple substrate re-use and inherent large area processing capability of Si will result in significant cost reductions. High quality heteroepitaxial GaAs growth on Si has been a subject of intense research. Due to its direct bandgap, GaAs is attractive for a number of optoelectronics applications and its integration with Si-based microelectronics has been a cherished goal. The lattice and thermal expansion mismatches with Si make it difficult to grow good device quality layers. We have recently demonstrated as the Si seed dimension is reduced below 100 nm dimensions, the quality of heteroepitaxial growth increases rapidly. The nm-scale Si structures are formed using low-cost, large area methods based on conventional integrated circuit processing methods. Successful research effort will lead to reduction in PV generation costs, and enhanced applicability of thin-film PV in terrestrial and space environments because in contrast with competing thin-film solar cells, GaAs thin-film solar cells will not suffer from light-induced performance degradation.

M V Systems is a company that received a SBIR Phase II grant for a project entitled: Fabrication of Low-bandgap Nano-crystalline SiGeC Thin Films Using the Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique. Their their award is funded under the American Recovery and Reinvestment Act of 2009 project is to develop thin film tandem solar cells, comprising of nanocrystalline silicon and silicon carbon (nc-Si and nc-Si:C) absorber materials, with a conversion efficiency of ~20%. The phase I project successfully developed one of the key components, i.e. intrinsic nc-Si:C with a band gap, Eg, of ~ 1.5 eV and with good opto-electronic properties. This key material will be used initially in phase II to fabricate cells in a single junction configuration with an efficiency goal of ~10%. Previously, developed "device quality" nc-Si materials, with Eg ~1.1eV, were used to produce solar cells with efficiency ~8%. Integrating the two devices in a tandem junction configuration is forecast to yield efficiencies of ~18%. Further improvement in the tandem junction device efficiency,to ~20%, may be achieved via the use of buffer layers at the p/i or i/n interfaces and by increasing the grain size which would boost the open circuit voltage, Voc. Higher efficiency thin film tandem solar cells will be critical to achieving the low costs necessary to achieve widespread adoption of photovoltaic energy generating systems. M V Systems is a company that received a SBIR Phase I grant for a project entitled: Fabrication of low-bandgap nano-crystalline SiGeC thin films using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Their project will develop nanocrystalline SiGeC thin films with an optical bandgap (Eg) in the range of 1.6-1.8 eV, and enhanced absorption characteristics, leading to low-cost, high-efficiency (>20%) photovoltaic devices. Previous attempts at improving the photovoltaic efficiency have not been consistent and successful. The proposed approach uses plasma-enhanced chemical vapor deposition (PECVD) technique to deposit these films, which allows greater control of the process by being able to manipulate the plasma and electron temperatures to control the ion density in the plasma, with an independent control of the process parameters. This flexibility does not exist in the currently used techniques. With the proposed technique, stable and consistent films of SiGeC can be deposited on the desired substrate at moderate temperatures. If successfully developed, this technique could provide higher efficiency solar cells for the alternative energy market. The goal of highly stable films, high deposition efficiency and process scalability for large-scale manufacturing can only be achieved if the basic process can be proven. The broader impacts of this research will be in the low-cost photovoltaic (PV) devices for power generation market. If successfully completed, this research could lead to a strong partnership between solar cell manufacturers and equipment manufacturers, leading to a potentially lucrative photovoltaics market. Currently, electricity generated with available PV devices is 3-4 times more expensive as the conventional electricity. The selected materials (Si, Ge and C) for the thin film are abundantly available, which can significantly reduce the raw materials costs. A large body of basic knowledge of the requirements of solar electricity for the competitive market already exists, which makes the development of the process with a realistic performance target easy to achieve. The main challenge for achieving this goal lies in being able to control the deposition process to assure a stable and robust process, as the previous work has not been able to achieve consistent results. The initial target of producing a triple-junction thin-film solar cell is a worthy first product demonstration, which will prove the efficacy of the proposed technique, and attract third-party funding with little difficulty.

Silicon Photonics Group is a company that received a STTR Phase I grant for a project entitled: Advanced Si-Ge-Sn-based Photonic Materials and Devices. Their research project aims to demonstrate prototype infrared light detectors and photovoltaic (solar cell) devices based on technology developed at Arizona State University. The new technology to be explored consists in growing optical-quality alloys of tin and germanium (Ge1-ySny) directly on silicon wafers. These alloys act as infrared materials, and they can also be used as templates for the subsequent growth of other semiconductors on silicon. Of particular interest for this project is the ternary alloy Ge1-x-ySixSny, grown for the first time at Arizona State University. Using this technology, it should be possible to build infrared detectors covering a spectral range previously inaccessible to silicon-based detectors, and to build multijunction photovoltaic devices for a more efficient capture of solar photons. The fabrication of semiconductor devices on cheap silicon wafers is of great significance because of the potentially enormous cost reductions and the possibility of integrating optoelectronic and microelectronic functions, which further reduces costs and contributes to system miniaturization. The infrared detectors proposed here cover the so-called telecom C-,L-, and U-bands within the wavelength window around 1500 nm, a region of great interest to the telecommunications industry. In the photovoltaics arena, the proposed devices have the potential to offer increased efficiencies to make crystalline silicon-based devices competitive with amorphous silicon solutions.