Jun 8, 2022

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that its Propel R&D metal-organic chemical vapor deposition (MOCVD) system has been selected by the Taiwan Semiconductor Research Institute, National Applied Research Laboratories (TSRI, Narlabs) for development and collaboration related to gallium nitride (GaN)-based power and RF devices. The single-wafer Propel platform is suitable for high-volume manufacturing and 300mm capabilities, as well as R&D applications. The Propel R&D system has been installed in TSRI’s Hsinchu laboratory and enables a joint collaborative effort to drive technology innovation, as well as develop and demonstrate technical capabilities in emerging GaN markets. The joint effort and collaboration aims to accelerate wide-bandgap compound semiconductor technology to high-volume and low-cost applications on 200mm and 300mm substrates. “Veeco’s Propel R&D system is uniquely qualified to deliver the performance and flexibility required to conduct advanced developments of power and RF devices,” comments Dr Chang-Hong Shen, deputy director-general, Research Fellow at TSRI. “We are excited to have this R&D system operating in our facility and look forward to support from the Veeco team in the years to come,” he adds. Veeco’s Propel GaN MOCVD system is designed specifically for power and RF applications. Featuring a single-wafer reactor platform, the system deposits GaN films for the production of highly efficient power and RF devices. The single-wafer reactor is based on Veeco’s TurboDisc technology including the IsoFlange and SymmHeat technologies, which provide homogeneous laminar flow and uniform temperature profile across the entire wafer. “We now have multiple technologies installed at TSRI’s facility and we look forward to helping them maximize the value of our platforms and the opportunity for technology collaboration,” says Adrian Devasahayam Ph.D., senior VP, product line management.