• The Rest of the World
Some of the emerging semiconductor substrates manufacturers profiled in this report include, are Sumitomo Electric Industries Ltd, Mitsubishi Chemicals, Adroit, 5N Plus, Hexatech, Dowa Electronics, Kyma Technologies, Easy
GaN, II-VI Incorporated, and Soitec. GaN substrate will remain the largest market over the forecast period due to its improved performance, efficiency and ubiquity of sophisticated power management and control functions. Consumer electronics segment will remain the largest market over the forecast period due to surge in the demand for substrates in the electronics devices. APAC will remain the largest region over the forecast period due to growth of the consumer electronics and automotive industries. Features of the Global Emerging Semiconductor Substrate Market
• Market Size Estimates: Emerging semiconductor substrate market size estimation in terms of value ($M) shipment. • Trend and Forecast Analysis: Market trends (2015-2020) and forecast (2021-2026) by various segments and regions. • Segmentation Analysis: Emerging semiconductor substrate market size by various segments, such as product type, application, end use industry, and regions in terms of value. • Regional Analysis: Emerging semiconductor substrate breakdown by North America, Europe, Asia Pacific, and Rest of the World. • Growth Opportunities: Analysis on growth opportunities in different product type, application, end use industry, and regions for the emerging semiconductor substrate market. • Strategic Analysis: This includes M&A, new product development, and competitive landscape for the emerging semiconductor substrate market. • Analysis of competitive intensity of the industry based on Porter’s Five Forces model. This report answers following 11 key questions
Q.1 What are some of the most promising, high-growth opportunities for the emerging semiconductor substrate by product type (GaSb, InSb, GaN, Ga2O3, AlN, Diamond, Engineered substrates, and others), by application (photonics and electronics), by end use industry (automotive, telecommunication, consumer electronics, and others), and by region (North America, Europe, Asia Pacific, and the Rest of the World)? Q.2 Which segments will grow at a faster pace and why? Q.3 Which regions will grow at a faster pace and why? Q.4 What are the key factors affecting market dynamics? What are the drivers and challenges of the market? Q.5 What are the business risks and threats to the market? Q.6 What are the emerging trends in this market and the reasons behind them? Q.7 What are some changing demands of customers in the market? Q.8 What are the new developments in the market? Which companies are leading these developments? Q.9 Who are the major players in this market? What strategic initiatives are being implemented by key players for business growth? Q.10 What are some of the competitive products and processes in this area and how big of a threat do they pose for loss of market share via product substitution? Q.11 What M&A activity has occurred in the last 5 years?

The global emerging semiconductor substrate market is expected to grow with a CAGR of 29.1% from 2020 to 2026

US Air Force Research Laboratory Backing NREL Efforts To Bring Down Manufacturing Costs Of III-V High Efficiency Solar Cells Using D-HVPE Technology; Kyma Technologies & Ceres Technologies Joins Hands Too
06:41 PM (Beijing Time)  - 13. July 2020
Key Takeaways
NREL has secured AFRL’s support in its bid to lower production costs of high efficiency III-V solar cells that’s currently limited to space use because of high costs
It plans to build a pilot-production reactor to make a solar cell measuring 6 inches in diameter
Using Kyma Technologies’ HVPE equipment, Ceres Technologies will build the reactor for NREL to be installed by July 2021
The collaborators see the various on earth uses of these high-efficiency solar cells thus produced for a variety of segments as ships, electric vehicles or portable devices along with of course for the space
The US Air Force Research Laboratory (AFRL) is investing in a National Renewable Energy Laboratory (NREL) solar cell technique to help bringing down manufacturing costs of III-V high efficiency solar cells so these can be used for widespread installations on earth and not be limited for space related uses alone. NREL underlines that III-V solar cells are extremely efficient solar cells produced using flexible gallium arsenide manufacturing process. These are commonly used to power satellites in earth’s orbit and for NASA’s missions to mars and other planets. Now using a technology called dynamic hydride vapor phase epitaxy (D-HVPE), NREL aims to fabricate these solar cells in a ‘high-throughput, low-cost manner’. The D-HVPE technology involves depositing chemical vapors onto a substrate using a multi-chamber reactor. With AFRL’s support, the US government laboratory says it wants to make a pilot-production reactor which can help scale the technology to meet the needs of Department of Defense customers. A production-scale reactor can lead to manufacturing of industry-standard cells 6 inches in diameter, going beyond the 2 inches diameter cell produced by a laboratory scale reactor. The largest such reactor is expected to be installed at NREL a year later in July 2021. Working together with NREL to design the reactor will be North Carolina based semiconductor supplier Kyma Technologies that’s also a HVPE equipment specialist. The reactor itself will be manufactured by New York based systems integration company Ceres Technologies. AFRL is collaborating with NREL through its Air Force Research Laboratory Space Vehicles Directorate unit to bring down the high cost of solar cell fabrication processes with a view to eventually be able to deploy these high-efficiency cells in broader civilian and commercial applications. NREL Lead Researcher Kelsey Horowitz counts ships, electric vehicles or portable devices for its various intended uses. “The maturation of D-HVPE technology will build upon AFRL’s other research developments with the goal of providing game-changing renewable power solutions to the warfighter,” explained AFRL Senior Physicist David Wilt. “For example, space-solar-beaming, central to AFRL’s Space Solar Power Incremental Demonstrations and Research (SSPIDR) project, needs affordable high efficiency solar cells such as those produced by D-HVPE. Scientists at AFRL anticipate using these next-gen solar sails to gather the sun’s energy, convert it to radio frequency and beam it to a receiver on earth.”
On its website , NREL said about D-HVPE. “Using this system, we have demonstrated single-junction GaAs solar cells with >25% conversion efficiency grown and growth rates exceeding 5 micron per minute. We are developing monolithic two-junction devices with target efficiencies >30%, with three-junction devices being planned for the future. In addition, we are pursuing high-quality top cells for integration with high-efficiency crystalline Si solar cells with an expected tandem cell efficiency >30%.”
In April 2020, NREL achieved its highest solar conversion efficiency with 47.1% for a six-junction III-V solar cell fabricated under concentrated illumination (see  NREL claims close to 50% efficiency for 6 junction solar cell ). Anu Bhambhani

NREL Solar Tech Finds Support In US Air Force

Kyma Technologies Inc of Raleigh, NC, USA - which provides  wide-bandgap semiconductor crystalline materials, crystal growth equipment, and  GaN-based photoconductive semiconductor switch (PCSS) devices - has used its  new K200 hydride vapor phase epitaxy (HVPE) growth tool to produce high-quality  200mm-diameter HVPE GaN-on-QST (QROMIS Substrate Technology) templates. This follows  Kyma’s demonstration in 2016 of 150mm-diameter GaN-on-QST templates in  partnership with QROMIS Inc of Santa Clara, CA, USA (formerly Quora Technology  Inc, spun off from Micron Technology in March 2015) and Kyma’s commissioning of  its K200 HVPE growth tool in June 2017. Picture:       A 200mm-diameter HVPE GaN-on-QST template. The demonstrated  200mm-diameter HVPE GaN-on-QST template consists of 10μm of HVPE gallium  nitride (GaN) grown on a 5μm metal-organic chemical vapor deposition (MOCVD)  GaN-on-QST wafer provided by QROMIS. X-ray diffraction (XRD) rocking curve  linewidths for the templates fall in the range 250-330arc-sec for the symmetric  {002) and asymmetric {102} XRD peaks, respectively, which is consistent with  high structural quality. Low wafer bow (~50μm) and smooth surface morphology  suggest that these materials should support high-performance device  manufacturing. Kyma says that  its newly constructed K200 HVPE tool represents a first for the industry and  was designed to enable uniform and rapid growth of high-quality GaN on a number  of different substrates. “We have  successfully transferred the process for making high-quality GaN to our K200  HVPE tool,” notes president & CEO Keith Evans. “We are currently engaging  with customers interested in large-diameter GaN-on-QST templates.”
Kyma and Qromis  are partnered for this work under a Kyma-led US Department of Energy (DOE)  Phase IIB Small Business Innovation Research (SBIR) award (number DE-SC0009653). Fabless firm  QROMIS recently began manufacturing 200mm QST substrates and GaN-on-QST wafers  using its foundry partner Vanguard International Semiconductor (VIS), which is  planning to offer GaN power device manufacturing services on 8-inch diameter  QST platform in 2018. “QROMIS’  CMOS-fab-friendly 200mm-diameter QST substrates and GaN-on-QST wafers represent  a disruptive technology, enabling GaN epitaxy from a few microns to hundreds of  microns for GaN power applications from 100V to 1500V-or-beyond GaN power  devices, in lateral, quasi-vertical or vertical forms, on the same 8-inch or  12-inch production platform at silicon power device cost,” says QROMIS  co-founder & CEO Cem Basceri. “Kyma’s K200 HVPE technology represents an  important value-add to QST-based GaN power device manufacturing by enabling the  low-cost deposition of a thicker and lower-defect-density GaN surface than is  practically achievable using MOCVD growth alone.”
Kyma is also  teamed with a semiconductor equipment OEM to manufacture K200 HVPE tools for  customers who prefer to bring Kyma’s HVPE GaN growth process in-house. See related items:

Kyma demos 200mm GaN HVPE on QROMIS’ MOCVD GaN-on-QST wafers

Kyma Technologies  Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal  growth and fabrication equipment, and power switching electronics) has  increased its capacity for manufacturing aluminium nitride (AlN) templates,  including diameters ranging from 2 inches up to 150mm and 200mm. Kyma manufactures  AlN templates using its patented plasma vapor deposition of nanocolumns (PVDNC)  technology. The firm says that manufacturers of blue, green and white  light-emitting diodes (LEDs) are choosing its PVDNC AlN templates as a  replacement for bare sapphire substrates and patterned sapphire substrates (PSS). Feedback from customers indicates that Kyma's AlN-on-sapphire templates provide  significant improvements in LED brightness, reverse voltage, and electro-static  discharge (ESD) yield. Also, the firm's AlN-on-silicon (Si) templates have been  demonstrated to support high-performance GaN transistor manufacturing for both  RF and power switching applications. While Kyma demonstrated large-diameter AlN on both silicon and sapphire substrates several years ago,  most customers have ordered primarily 2-inch and 4-inch  diameter products. Recently however,  to drive down device manufacturing costs, customers have shown growing interest in larger-diameter AlN template products. In  response, Kyma has added  large-diameter PVDNC manufacturing capacity which, together with proprietary enhancements in its PVDNC process and equipment design, has enabled  Kyma to move down the manufacturing cost curve for all of its AlN template  products. "We have listened  to our customers and have responded to their needs," notes Kyma's  director of sales Ms Tamara Stephenson. "We are excited  to be able to offer more aggressive pricing as well as increased volume  availability of all of our AlN template products, including larger-diameter products including 150mm and  200mm. "
See related items:


Kyma increases AlN template manufacturing capacity

Kyma Technologies Inc of Raleigh, NC, USA (which provides  crystalline nitride materials, crystal growth and fabrication equipment, and  power switching electronics) has added β-Ga2O3 epitaxial wafers to its growing range of  advanced materials. Crystalline beta gallium oxide (β-Ga2O3) is a  promising wide-bandgap semiconductor (WBGS) material due in part to its large  bandgap of 4.8-4.9eV, its high breakdown field of 8MV/cm, and its high dielectric  constant of 10 which, together with its electron mobility of up to 300cm2/V-s, translate to a high-voltage  Baliga figure of merit (HV-BFOM) that is more than 3000 times greater than that  of siliicon, more than 8 times greater than that of silicon carbide (4H-SiC),  and more than 4 times greater than that of gallium nitride (GaN). Also, its  high-frequency Baliga figure of merit (HF-BFOM) is ~150 times that of silicon,  ~3 times that of 4H-SiC, and 50% greater than that of GaN. Benefiting from a long-time collaborative partnership with leading  scientists in the Sensors Directorate of the Air Force Research Laboratory  (AFRL) at Wright Patterson Air Force Base, Kyma's technical team recently began  developing processes for the growth of β-Ga2O3 on a number  of substrates including homoepitaxial growth on commercially available  bulk β-Ga2O3 substrates. The team has so far  demonstrated high growth rates (>3μm/hr) and high-quality epilayers of  several microns in thickness. Undoped films show semi-insulating behavior, and  n-type films appear to be well behaved, with electron concentrations in the  range 1017-1018cm-3. More detailed characterization of these materials is ongoing. Kyma believes that β-Ga2O3 represents a new frontier in the  continuous search for higher-performance semiconductor devices. "It is  exciting to be able to leverage our core competencies to address this exciting  newcomer to the advanced semiconductor materials and device technology space,"  says CEO Keith Evans.


Kyma adds gallium oxide epiwafers to product portfolio

Nanotronics Imaging develops an inspection microscope that incorporates a convergence of modern optics, motion control, and image capture. Nanotronics Imaging products are designed to make object recognition and defect detection repeatable and quantifiable. The company was founded in 2010 and is based in Brooklyn, New York.

Nanotronics Imaging

A collaborative partnership was quickly spawned which led to Kyma 's purchase of the nSPEC ® tool , which was installed in May 2013 at Kyma Technologies , Inc. ' headquarters in Raleigh , North Carolina .

Kyma Technologies - Kyma Partners with Nanotronics Imaging

Qromis is fabless technology innovator focusing on energy efficient wide bandgap (WBG) semiconductor materials and device solutions. It is based in Santa Clara, California.

Qromis

Kyma president & CEO Keith Evans commented , `` It is exciting to extend our partnership with QROMIS to create large diameter free-standing GaN materials which can be further tailored as a new 100-mm diameter GaN substrate offering .

Kyma Technologies Demonstrates 100-mm Diameter Free-Standing GaN in Partnership with QROMIS, Inc. under ARPA-E SWITCHES.

Michigan State University focuses its resources on creating solutions to pressing challenges, while providing life-changing opportunities to a diverse and inclusive academic community through more than 200 programs of study in 17 degree-granting colleges.

Michigan State University

The mission of the Michigan State University and Diamond is to lead a successful transatlantic collaboration in applied research and development , knowledge transfer and education to the mutual benefit of the center , its partners , its customers and society in general .

Kyma Technologies and Michigan State University Partner in Large Area Electronic Grade Diamond Wafer Development.

Quora offers users a way to write new content and share content from the web. The company organizes people and interests so users can find, collect and share valuable information.

Quora

GTAT Corporation is a diversified technology company producing advanced materials and crystal growth technology for the solar, power electronics and optoelectronics industries. The company accelerates the growth of a new generation of products across this diversified set of global markets.On November 1st, 2021, GT Advanced Technologies was acquired by ON Semiconductor at a valuation of $415M.

GT Advanced Technologies

Kyma Technologies

Duke University

Intel

Power Electronics Industry Collaborative

Crystal IS

Veeco Instruments

Air Force Research Laboratory

DesignAdvance Systems

Integrated Silicon System

LipoScience

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Startups developing new or improved materials (chemicals, alloys, etc.) that provide physical or functional advantages to basic materials. 

Advanced Materials

Companies in this collection develop everything from microprocessors to flash memory, integrated circuits specifically for quantum computing and artificial intelligence to OLED for displays, massive production fabs to circuit design firms, and everything in between.

Semiconductors, Chips, and Advanced Electronics

Kyma Technologies provides advanced materials solutions that promote safety and energy efficiency. Kyma's products include a diverse portfolio of crystalline nitride semiconductor materials, crystal growth and fabrication equipment, and power switching electronics. Additionally, the company is developing a suite of chemical and electromagnetic field sensor technologies.

Date	Round	Amount	Investors	Valuation Valuations are submitted by companies, mined from state filings or news, provided by VentureSource, or based on a comparables valuation model.	Revenue	Sources
4/10/2020	Loan	$0.25M	Paycheck Protection Program		0 FY undefined
10/23/2013	Grant	$99M	Subscribe to see more		0 FY undefined	10
6/9/2003	Series B	$99M	Subscribe to see more	$15.95M	0 FY undefined	0
10/1/2001	Series A - II	$99M	Subscribe to see more		0 FY undefined	0
1/1/2000	Series A	$99M	Subscribe to see more		0 FY undefined	0

Date	4/10/2020	10/23/2013	6/9/2003	10/1/2001	1/1/2000
Round	Loan	Grant	Series B	Series A - II	Series A
Amount	$0.25M	$99M	$99M	$99M	$99M
Investors	Paycheck Protection Program	Subscribe to see more	Subscribe to see more	Subscribe to see more	Subscribe to see more
Valuation			$15.95M
Revenue	0 FY undefined	0 FY undefined	0 FY undefined	0 FY undefined	0 FY undefined
Sources		10	0	0	0

Wells Fargo Success Story

3M Success Story

Platform Overview

Kyma Technologies

Total Raised

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Kyma Technologies Funding, Kyma Technologies Valuation & Kyma Technologies Revenue

Kyma Technologies Deal Terms

2 Deal Terms

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