Jem Enterprises is a company that received a SBIR Phase I grant for a project entitled: Tin(II) Sulfide Photovoltaics. Their project aims to develop photovoltaic devices based on tin (II) sulfide (SnS). The properties of SnS, including bandgaps, carrier density and mobility, chemical and thermal stability, and metallurgical properties, promise the possibility to achieve relatively high conversion efficiency given state-of-art process control and device design. In this project, close space sublimation (CSS) technique, a thin film fabrication method proven for low cost and high manufacturability, will be used to synthesize SnS. The broader/commercial impact of this project will be the potential to produce photovoltaic devices based on low-cost and environmentally-friendly materials. There is no doubt that solar electricity has attracted a lot of attention in recent years as an alternative and renewable energy source. However, most of the current solar cell technologies have one or more of the following issues that, (1) raw materials are not abundantly available; (2) toxic materials are used; (3) overall cost is high. This project will address these issues by developing photovoltaic devices using SnS, a semiconductor material that can be supplied on a massive scale and at low recovery costs.

Nextnano is a company that focuses on the development of software for semiconductor nanodevices in the technology industry. The company's main product is a software that allows engineers and scientists to model, design, and understand the properties of nanoscale semiconductor structures and devices. The company primarily sells to the semiconductor and quantum science industries. It is based in Germany.

Silicon Photonics Group is a company that received a STTR Phase I grant for a project entitled: Advanced Si-Ge-Sn-based Photonic Materials and Devices. Their research project aims to demonstrate prototype infrared light detectors and photovoltaic (solar cell) devices based on technology developed at Arizona State University. The new technology to be explored consists in growing optical-quality alloys of tin and germanium (Ge1-ySny) directly on silicon wafers. These alloys act as infrared materials, and they can also be used as templates for the subsequent growth of other semiconductors on silicon. Of particular interest for this project is the ternary alloy Ge1-x-ySixSny, grown for the first time at Arizona State University. Using this technology, it should be possible to build infrared detectors covering a spectral range previously inaccessible to silicon-based detectors, and to build multijunction photovoltaic devices for a more efficient capture of solar photons. The fabrication of semiconductor devices on cheap silicon wafers is of great significance because of the potentially enormous cost reductions and the possibility of integrating optoelectronic and microelectronic functions, which further reduces costs and contributes to system miniaturization. The infrared detectors proposed here cover the so-called telecom C-,L-, and U-bands within the wavelength window around 1500 nm, a region of great interest to the telecommunications industry. In the photovoltaics arena, the proposed devices have the potential to offer increased efficiencies to make crystalline silicon-based devices competitive with amorphous silicon solutions.

M V Systems is a company that received a SBIR Phase II grant for a project entitled: Fabrication of Low-bandgap Nano-crystalline SiGeC Thin Films Using the Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique. Their their award is funded under the American Recovery and Reinvestment Act of 2009 project is to develop thin film tandem solar cells, comprising of nanocrystalline silicon and silicon carbon (nc-Si and nc-Si:C) absorber materials, with a conversion efficiency of ~20%. The phase I project successfully developed one of the key components, i.e. intrinsic nc-Si:C with a band gap, Eg, of ~ 1.5 eV and with good opto-electronic properties. This key material will be used initially in phase II to fabricate cells in a single junction configuration with an efficiency goal of ~10%. Previously, developed "device quality" nc-Si materials, with Eg ~1.1eV, were used to produce solar cells with efficiency ~8%. Integrating the two devices in a tandem junction configuration is forecast to yield efficiencies of ~18%. Further improvement in the tandem junction device efficiency,to ~20%, may be achieved via the use of buffer layers at the p/i or i/n interfaces and by increasing the grain size which would boost the open circuit voltage, Voc. Higher efficiency thin film tandem solar cells will be critical to achieving the low costs necessary to achieve widespread adoption of photovoltaic energy generating systems. M V Systems is a company that received a SBIR Phase I grant for a project entitled: Fabrication of low-bandgap nano-crystalline SiGeC thin films using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Their project will develop nanocrystalline SiGeC thin films with an optical bandgap (Eg) in the range of 1.6-1.8 eV, and enhanced absorption characteristics, leading to low-cost, high-efficiency (>20%) photovoltaic devices. Previous attempts at improving the photovoltaic efficiency have not been consistent and successful. The proposed approach uses plasma-enhanced chemical vapor deposition (PECVD) technique to deposit these films, which allows greater control of the process by being able to manipulate the plasma and electron temperatures to control the ion density in the plasma, with an independent control of the process parameters. This flexibility does not exist in the currently used techniques. With the proposed technique, stable and consistent films of SiGeC can be deposited on the desired substrate at moderate temperatures. If successfully developed, this technique could provide higher efficiency solar cells for the alternative energy market. The goal of highly stable films, high deposition efficiency and process scalability for large-scale manufacturing can only be achieved if the basic process can be proven. The broader impacts of this research will be in the low-cost photovoltaic (PV) devices for power generation market. If successfully completed, this research could lead to a strong partnership between solar cell manufacturers and equipment manufacturers, leading to a potentially lucrative photovoltaics market. Currently, electricity generated with available PV devices is 3-4 times more expensive as the conventional electricity. The selected materials (Si, Ge and C) for the thin film are abundantly available, which can significantly reduce the raw materials costs. A large body of basic knowledge of the requirements of solar electricity for the competitive market already exists, which makes the development of the process with a realistic performance target easy to achieve. The main challenge for achieving this goal lies in being able to control the deposition process to assure a stable and robust process, as the previous work has not been able to achieve consistent results. The initial target of producing a triple-junction thin-film solar cell is a worthy first product demonstration, which will prove the efficacy of the proposed technique, and attract third-party funding with little difficulty.

Solarno Incorporated is an early-stage technology development company, focusing on the commercialization of emerging nanotechnologies in the solar energy sector. The company's main offerings include the development of nanomaterials for solar water heater systems, advanced solar cells devices, high energy density supercapacitors, and lighting solutions. Solarno primarily sells to the renewable energy industry. It is based in Coppell, Texas.

Isosceles is a company that received a STTR Phase I grant for a project entitled: Full Spectrum Conjugated Polymers for Highly Efficient Organic Photovoltaics. Their their award is funded under the American Recovery and Reinvestment Act of 2009 and their project will demonstrate the feasibility of forming full spectrum highly efficient polymer solar cells from newly designed conjugated and potentially variable bandgap polymers that harvest visible through infrared light. The novel materials will be forged by incorporating Silole and donor-acceptor-donor moieties into the backbone and are expected to increase light harvesting and carrier mobility, and hence short circuit current output potentially by a factor of three over the state of the art. The key innovations of this work will also optimize energy levels to reduce voltage loss and further optimization of device structure and film morphology is expected improve fill factor. The primary objective of phase I is to determine the feasibility of forging full spectrum and high carrier mobility conjugated polymers that achieve highly efficient solar conversion. An ancillary goal of this work is arrive at an understanding of photophysical processes and device physics that will lead to optimal device fabrication during phase II. The environmental, societal and economic impacts of this technology are enormously broad. The ensuing abrupt drop in energy costs stemming from full spectrum harvesting promises to deliver stability and urgently needed relief to today's volatile oil based global economy. While photovoltaic (PV) production is already the fastest growing source of energy across the globe, the planned efforts of this STTR project are expected to disruptively reduce the projected cost of photovoltaic production in 2010 by a factor of 3. At a forecasted production cost of $0.70 per Watt, this research will demonstrate a technology that is competitive with the cost of electricity that is produced from fossil fuels. This technology will provide clean and cost competitive energy for home and industrial power, vehicle propulsion, consumer electronics, remote sensing, security, and an endless list of existing applications that currently rely on energy from fossil fuel.