Ultrasonic Technologies is a company that received a SBIR Phase I grant for a project entitled: Resonance Ultrasonic Vibrations for Defect Characterization in Solar Silicon Wafers. Their Phase I research project addresses fundamentals of the innovative experimental methodology for quick and accurate assessment of mechanical defects in solar-grade full-size (up to 210 mm) silicon (Si) wafers. The objective is to justify a commercial prototype of the Resonance Ultrasonic Vibrations (RUV) system which ultimately will be used as a real-time in-line process control tool for identification and rejection from a solar cell production line of mechanically unstable, i.e. fragile wafers due to periphery cracks and high level of residual stress. The broader impact of the program will be in the commercialization of the RUV system to address critical needs of the photovoltaic (PV) industry. The world-wide PV market exhibits a steady yearly up to 40% growth rate in recent years. There is potential for applying this approach to other technologies, such as stress monitoring in Silicon-on isolator wafers and SiGe epitaxial layers in high-speed electronics and adhesion quality assessment in thin polycrystalline Si films on glass for flat panel displays.

Silicon Photonics Group is a company that received a STTR Phase I grant for a project entitled: Advanced Si-Ge-Sn-based Photonic Materials and Devices. Their research project aims to demonstrate prototype infrared light detectors and photovoltaic (solar cell) devices based on technology developed at Arizona State University. The new technology to be explored consists in growing optical-quality alloys of tin and germanium (Ge1-ySny) directly on silicon wafers. These alloys act as infrared materials, and they can also be used as templates for the subsequent growth of other semiconductors on silicon. Of particular interest for this project is the ternary alloy Ge1-x-ySixSny, grown for the first time at Arizona State University. Using this technology, it should be possible to build infrared detectors covering a spectral range previously inaccessible to silicon-based detectors, and to build multijunction photovoltaic devices for a more efficient capture of solar photons. The fabrication of semiconductor devices on cheap silicon wafers is of great significance because of the potentially enormous cost reductions and the possibility of integrating optoelectronic and microelectronic functions, which further reduces costs and contributes to system miniaturization. The infrared detectors proposed here cover the so-called telecom C-,L-, and U-bands within the wavelength window around 1500 nm, a region of great interest to the telecommunications industry. In the photovoltaics arena, the proposed devices have the potential to offer increased efficiencies to make crystalline silicon-based devices competitive with amorphous silicon solutions.

Banpil Photonics is a company that focuses on the intersection of optics and electronics technologies. The company's main offerings include the development and manufacturing of multispectral image sensors for various applications, energy harvesting devices for energy applications, and low-power, high-speed electrical interconnects for computing and networking applications. It is based in Santa Clara, California.

Isosceles is a company that received a STTR Phase I grant for a project entitled: Full Spectrum Conjugated Polymers for Highly Efficient Organic Photovoltaics. Their their award is funded under the American Recovery and Reinvestment Act of 2009 and their project will demonstrate the feasibility of forming full spectrum highly efficient polymer solar cells from newly designed conjugated and potentially variable bandgap polymers that harvest visible through infrared light. The novel materials will be forged by incorporating Silole and donor-acceptor-donor moieties into the backbone and are expected to increase light harvesting and carrier mobility, and hence short circuit current output potentially by a factor of three over the state of the art. The key innovations of this work will also optimize energy levels to reduce voltage loss and further optimization of device structure and film morphology is expected improve fill factor. The primary objective of phase I is to determine the feasibility of forging full spectrum and high carrier mobility conjugated polymers that achieve highly efficient solar conversion. An ancillary goal of this work is arrive at an understanding of photophysical processes and device physics that will lead to optimal device fabrication during phase II. The environmental, societal and economic impacts of this technology are enormously broad. The ensuing abrupt drop in energy costs stemming from full spectrum harvesting promises to deliver stability and urgently needed relief to today's volatile oil based global economy. While photovoltaic (PV) production is already the fastest growing source of energy across the globe, the planned efforts of this STTR project are expected to disruptively reduce the projected cost of photovoltaic production in 2010 by a factor of 3. At a forecasted production cost of $0.70 per Watt, this research will demonstrate a technology that is competitive with the cost of electricity that is produced from fossil fuels. This technology will provide clean and cost competitive energy for home and industrial power, vehicle propulsion, consumer electronics, remote sensing, security, and an endless list of existing applications that currently rely on energy from fossil fuel.

Gratings Incorporated is a company that received a STTR Phase I grant for a project entitled: High Efficiency Thin-film Photovoltaics on Low-cost Substrates by Layer Transfer. Their their award is funded under the American Recovery and Reinvestment Act of 2009 and their project will apply high aspect ratio, nm-scale, columnar, and crystalline Si structures as templates for high-quality growth of thin-film GaAs solar cells on low-cost flexible substrates. Sub-10-nm Si seed layers are expected to facilitate growth of low-defect density GaAs films. The aspect ratio of nm-scale structures also serve as sacrificial layers for removal of completed GaAs solar cell. Epitaxial growth and characterization of GaAs films on nm-scale Si structures will be carried out at the Center for High Technology at the University of New Mexico. Successful phase I STTR research will lead to commercialization of high (~ 20 %) efficient, flexible solar cells for applications in a wide range of terrestrial and space environments. Multiple substrate re-use and inherent large area processing capability of Si will result in significant cost reductions. High quality heteroepitaxial GaAs growth on Si has been a subject of intense research. Due to its direct bandgap, GaAs is attractive for a number of optoelectronics applications and its integration with Si-based microelectronics has been a cherished goal. The lattice and thermal expansion mismatches with Si make it difficult to grow good device quality layers. We have recently demonstrated as the Si seed dimension is reduced below 100 nm dimensions, the quality of heteroepitaxial growth increases rapidly. The nm-scale Si structures are formed using low-cost, large area methods based on conventional integrated circuit processing methods. Successful research effort will lead to reduction in PV generation costs, and enhanced applicability of thin-film PV in terrestrial and space environments because in contrast with competing thin-film solar cells, GaAs thin-film solar cells will not suffer from light-induced performance degradation.

AOS Solar was started in 2005 to combine the material cost and manufacturing process economics of thin film solar PV with the efficiency and reliability of crystalline silicon solar PV. The company have an initial prototype solar coupon built and tested using technology. nnThe company's key enablers to achieve market traction are the cost and reliability of the company's product. The silicon on glass (SOG) technology the company are developing will enable solar panels costing around $1/watt to manufacture on the company's pilot line, with lower costs as the company ramp up production due to manufacturing efficiencies and learning curve. Solar silicon is an established technology with proven 20+ year life (versus newer thin film technologies). nnToday the company have working coupons at 7.5% efficiency and the company are working to scale up to larger cells with target 9% efficiency in Q-1, 2008. The company's form factor and efficiency limits are based on first generation technology. By scaling the company's manufacturing and improving the company's technology the company expect to achieve 16 - 18% efficiency in a single junction and 22 - 24% efficiency in a double junction module. nnThe company's A round funding will be used to continue development of the company's equipment / process technology in order to manufacture on larger substrates (2.5' x 4' glass) and to design a scaled up manufacturing line (30+MW annual capacity) based on this development.