About Advent Solar
Advent Solar, Inc. is a manufacturer of advanced technology solar cells and modules. In November 2009, the assets of Advent Solar were acquired by Applied Materials (Nasdaq: AMAT).
Expert Collections containing Advent Solar
Expert Collections are analyst-curated lists that highlight the companies you need to know in the most important technology spaces.
Advent Solar is included in 1 Expert Collection, including Renewable Energy.
Companies in the Renewable Energy space, including solar, wind, hydro, geothermal, and nuclear energy providers, as well as related software developers.
Advent Solar Patents
Advent Solar has filed 1 patent.
Photovoltaics, Solar cells, Transistor types, Energy conversion, Applications of photovoltaics
Photovoltaics, Solar cells, Transistor types, Energy conversion, Applications of photovoltaics
Latest Advent Solar News
Mar 26, 2014
Mar 26, 2014, 12:07pm MDT CBRE finds buyer for Advent Solar building Email | Twitter The 87,000-square-foot Advent Solar industrial complex at Mesa del Sol has been purchased. CBRE New Mexico Senior Associate Jim P. Dountas said the buyer was a national investor and the real estate was sold as a nearly fully leased, stabilized investment property. The buyer and the terms of the sale were not disclosed. Advent Solar was a manufacturer of advanced solar cells at Mesa del Sol from 2007 until it closed there in 2009. The building’s main tenant now is engineering service provider MSR/FSR and the CFV Solar Test Laboratory. Dountas said there is about 3,300-square-feet of space available in the building. “After a relatively short national marketing campaign we developed a list of several interested parties. Most were out-of-state buyers interested in investing in Albuquerque. We worked with the seller to help them select the best offer/buyer,” said Jim Smith , a CBRE New Mexico vice president and industrial specialist. Smith worked with Dountas on the project. CBRE is also marketing the former Schott Solar photovoltaic manufacturing plant at Mesa del Sol, part of the community’s Innovation Park. Schott shuttered its doors there in 2012. The complex consists of two buildings that are approximately 200,000 square feet. 505.348.8315 | email@example.com Commercial/residential real estate, retail, restaurants Industries:
Advent Solar Frequently Asked Questions (FAQ)
When was Advent Solar founded?
Advent Solar was founded in 2002.
Where is Advent Solar's headquarters?
Advent Solar's headquarters is located at 5600 University Drive SE, Albuquerque.
What is Advent Solar's latest funding round?
Advent Solar's latest funding round is Asset Sale.
How much did Advent Solar raise?
Advent Solar raised a total of $118M.
Who are the investors of Advent Solar?
Investors of Advent Solar include Applied Materials, Fort Washington Investment Advisors, New Mexico Co-Investment Partners LP, EnerTech Capital, @Ventures and 12 more.
Who are Advent Solar's competitors?
Competitors of Advent Solar include Bossa Nova Vision, Trina Solar, Heliatek, Jem Enterprises, Meridian Deployment Corporation and 7 more.
Compare Advent Solar to Competitors
Gratings Incorporated is a company that received a STTR Phase I grant for a project entitled: High Efficiency Thin-film Photovoltaics on Low-cost Substrates by Layer Transfer. Their their award is funded under the American Recovery and Reinvestment Act of 2009 and their project will apply high aspect ratio, nm-scale, columnar, and crystalline Si structures as templates for high-quality growth of thin-film GaAs solar cells on low-cost flexible substrates. Sub-10-nm Si seed layers are expected to facilitate growth of low-defect density GaAs films. The aspect ratio of nm-scale structures also serve as sacrificial layers for removal of completed GaAs solar cell. Epitaxial growth and characterization of GaAs films on nm-scale Si structures will be carried out at the Center for High Technology at the University of New Mexico. Successful phase I STTR research will lead to commercialization of high (~ 20 %) efficient, flexible solar cells for applications in a wide range of terrestrial and space environments. Multiple substrate re-use and inherent large area processing capability of Si will result in significant cost reductions. High quality heteroepitaxial GaAs growth on Si has been a subject of intense research. Due to its direct bandgap, GaAs is attractive for a number of optoelectronics applications and its integration with Si-based microelectronics has been a cherished goal. The lattice and thermal expansion mismatches with Si make it difficult to grow good device quality layers. We have recently demonstrated as the Si seed dimension is reduced below 100 nm dimensions, the quality of heteroepitaxial growth increases rapidly. The nm-scale Si structures are formed using low-cost, large area methods based on conventional integrated circuit processing methods. Successful research effort will lead to reduction in PV generation costs, and enhanced applicability of thin-film PV in terrestrial and space environments because in contrast with competing thin-film solar cells, GaAs thin-film solar cells will not suffer from light-induced performance degradation.
Silicon Photonics Group is a company that received a STTR Phase I grant for a project entitled: Advanced Si-Ge-Sn-based Photonic Materials and Devices. Their research project aims to demonstrate prototype infrared light detectors and photovoltaic (solar cell) devices based on technology developed at Arizona State University. The new technology to be explored consists in growing optical-quality alloys of tin and germanium (Ge1-ySny) directly on silicon wafers. These alloys act as infrared materials, and they can also be used as templates for the subsequent growth of other semiconductors on silicon. Of particular interest for this project is the ternary alloy Ge1-x-ySixSny, grown for the first time at Arizona State University. Using this technology, it should be possible to build infrared detectors covering a spectral range previously inaccessible to silicon-based detectors, and to build multijunction photovoltaic devices for a more efficient capture of solar photons. The fabrication of semiconductor devices on cheap silicon wafers is of great significance because of the potentially enormous cost reductions and the possibility of integrating optoelectronic and microelectronic functions, which further reduces costs and contributes to system miniaturization. The infrared detectors proposed here cover the so-called telecom C-,L-, and U-bands within the wavelength window around 1500 nm, a region of great interest to the telecommunications industry. In the photovoltaics arena, the proposed devices have the potential to offer increased efficiencies to make crystalline silicon-based devices competitive with amorphous silicon solutions.
M V Systems is a company that received a SBIR Phase II grant for a project entitled: Fabrication of Low-bandgap Nano-crystalline SiGeC Thin Films Using the Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique. Their their award is funded under the American Recovery and Reinvestment Act of 2009 project is to develop thin film tandem solar cells, comprising of nanocrystalline silicon and silicon carbon (nc-Si and nc-Si:C) absorber materials, with a conversion efficiency of ~20%. The phase I project successfully developed one of the key components, i.e. intrinsic nc-Si:C with a band gap, Eg, of ~ 1.5 eV and with good opto-electronic properties. This key material will be used initially in phase II to fabricate cells in a single junction configuration with an efficiency goal of ~10%. Previously, developed "device quality" nc-Si materials, with Eg ~1.1eV, were used to produce solar cells with efficiency ~8%. Integrating the two devices in a tandem junction configuration is forecast to yield efficiencies of ~18%. Further improvement in the tandem junction device efficiency,to ~20%, may be achieved via the use of buffer layers at the p/i or i/n interfaces and by increasing the grain size which would boost the open circuit voltage, Voc. Higher efficiency thin film tandem solar cells will be critical to achieving the low costs necessary to achieve widespread adoption of photovoltaic energy generating systems. M V Systems is a company that received a SBIR Phase I grant for a project entitled: Fabrication of low-bandgap nano-crystalline SiGeC thin films using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Their project will develop nanocrystalline SiGeC thin films with an optical bandgap (Eg) in the range of 1.6-1.8 eV, and enhanced absorption characteristics, leading to low-cost, high-efficiency (>20%) photovoltaic devices. Previous attempts at improving the photovoltaic efficiency have not been consistent and successful. The proposed approach uses plasma-enhanced chemical vapor deposition (PECVD) technique to deposit these films, which allows greater control of the process by being able to manipulate the plasma and electron temperatures to control the ion density in the plasma, with an independent control of the process parameters. This flexibility does not exist in the currently used techniques. With the proposed technique, stable and consistent films of SiGeC can be deposited on the desired substrate at moderate temperatures. If successfully developed, this technique could provide higher efficiency solar cells for the alternative energy market. The goal of highly stable films, high deposition efficiency and process scalability for large-scale manufacturing can only be achieved if the basic process can be proven. The broader impacts of this research will be in the low-cost photovoltaic (PV) devices for power generation market. If successfully completed, this research could lead to a strong partnership between solar cell manufacturers and equipment manufacturers, leading to a potentially lucrative photovoltaics market. Currently, electricity generated with available PV devices is 3-4 times more expensive as the conventional electricity. The selected materials (Si, Ge and C) for the thin film are abundantly available, which can significantly reduce the raw materials costs. A large body of basic knowledge of the requirements of solar electricity for the competitive market already exists, which makes the development of the process with a realistic performance target easy to achieve. The main challenge for achieving this goal lies in being able to control the deposition process to assure a stable and robust process, as the previous work has not been able to achieve consistent results. The initial target of producing a triple-junction thin-film solar cell is a worthy first product demonstration, which will prove the efficacy of the proposed technique, and attract third-party funding with little difficulty.
Nextnano is a company that focuses on the development of software for semiconductor nanodevices in the technology industry. The company's main product is a software that allows engineers and scientists to model, design, and understand the properties of nanoscale semiconductor structures and devices. The company primarily sells to the semiconductor and quantum science industries. It is based in Germany.
AOS Solar was started in 2005 to combine the material cost and manufacturing process economics of thin film solar PV with the efficiency and reliability of crystalline silicon solar PV. The company have an initial prototype solar coupon built and tested using technology. nnThe company's key enablers to achieve market traction are the cost and reliability of the company's product. The silicon on glass (SOG) technology the company are developing will enable solar panels costing around $1/watt to manufacture on the company's pilot line, with lower costs as the company ramp up production due to manufacturing efficiencies and learning curve. Solar silicon is an established technology with proven 20+ year life (versus newer thin film technologies). nnToday the company have working coupons at 7.5% efficiency and the company are working to scale up to larger cells with target 9% efficiency in Q-1, 2008. The company's form factor and efficiency limits are based on first generation technology. By scaling the company's manufacturing and improving the company's technology the company expect to achieve 16 - 18% efficiency in a single junction and 22 - 24% efficiency in a double junction module. nnThe company's A round funding will be used to continue development of the company's equipment / process technology in order to manufacture on larger substrates (2.5' x 4' glass) and to design a scaled up manufacturing line (30+MW annual capacity) based on this development.
Jem Enterprises is a company that received a SBIR Phase I grant for a project entitled: Tin(II) Sulfide Photovoltaics. Their project aims to develop photovoltaic devices based on tin (II) sulfide (SnS). The properties of SnS, including bandgaps, carrier density and mobility, chemical and thermal stability, and metallurgical properties, promise the possibility to achieve relatively high conversion efficiency given state-of-art process control and device design. In this project, close space sublimation (CSS) technique, a thin film fabrication method proven for low cost and high manufacturability, will be used to synthesize SnS. The broader/commercial impact of this project will be the potential to produce photovoltaic devices based on low-cost and environmentally-friendly materials. There is no doubt that solar electricity has attracted a lot of attention in recent years as an alternative and renewable energy source. However, most of the current solar cell technologies have one or more of the following issues that, (1) raw materials are not abundantly available; (2) toxic materials are used; (3) overall cost is high. This project will address these issues by developing photovoltaic devices using SnS, a semiconductor material that can be supplied on a massive scale and at low recovery costs.